Discrete Semiconductors > Transistors > BJTs > BFG35-115
BFG35,115
| Part Number: | BFG35,115 |
| Manufacturer: | NXP Semiconductors |
| Part Type: | Discrete Semiconductors > Transistors > BJTs > BFG35-115 |
| Qty Available: | |
| Description: | BFG35 Series 18 V 1 W 4 GHz SMT NPN Wideband Transistor - SOT-223 |
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BFG35 Series 18 V 1 W 4 GHz SMT NPN Wideband Transistor - SOT-223
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SC |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 4 |
| Weight | 188.014037 mg |
| Collector Base Voltage (VCBO) | 25 V |
| Collector Emitter Breakdown Voltage | 18 V |
| Collector Emitter Voltage (VCEO) | 18 V |
| Continuous Collector Current | 150 mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 2 V |
| Frequency | 4 GHz |
| Gain | 15 dB |
| Gain Bandwidth Product | 4 GHz |
| Max Breakdown Voltage | 18 V |
| Max Collector Current | 150 mA |
| Max Frequency | 4 GHz |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 1 W |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Output Power | 1 W |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 1 W |
| Schedule B | 8541290080 |
| Transition Frequency | 4 GHz |
| Height | 1.7 mm |
| Length | 6.7 mm |
| Width | 3.7 mm |
Images
Documentation for NXP Semiconductors BFG35,115
| Datasheet | View & Download BFG35-115 Datasheet |
| Datasheet | View & Download BFG35-115 Datasheet |
| Datasheet | View & Download BFG35-115 Datasheet |
| Datasheet | View & Download BFG35-115 Datasheet |
Alternate Descriptions
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