Discrete Semiconductors > Transistors > BJTs > BC847SE6327
BC847SE6327
| Part Number: | BC847SE6327 |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > BJTs > BC847SE6327 |
| Qty Available: | |
| Description: | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, |
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Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon,
Specifications
| TYPE | DESCRIPTION |
| Case/Package | SOT-363-6 |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Collector Base Voltage (VCBO) | 50 V |
| Collector Emitter Breakdown Voltage | 45 V |
| Collector Emitter Voltage (VCEO) | 45 V |
| Current Rating | 100 mA |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | 6 V |
| Gain Bandwidth Product | 250 MHz |
| hFE Min | 250 |
| Max Breakdown Voltage | 45 V |
| Max Collector Current | 100 mA |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 250 mW |
| Min Operating Temperature | -65 °C |
| Packaging | Tape & Reel |
| Polarity | NPN |
| Transition Frequency | 250 MHz |
| Voltage Rating (DC) | 45 V |
Documentation for Infineon BC847SE6327
| Datasheet | View & Download BC847SE6327 Datasheet |
Alternate Descriptions
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