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Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Specifications
| TYPE | DESCRIPTION |
| Resistance | 400 mΩ |
Documentation for Toshiba 2SK2698
| Datasheet | View & Download 2SK2698 Datasheet |
| Datasheet | View & Download 2SK2698 Datasheet |
Alternate Descriptions
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