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          Discrete Semiconductors > Transistors > BJTs > 2SA1943OQ

2SA1943-O(Q)

Part Number: 2SA1943-O(Q)
Manufacturer: Toshiba
Part Type: Discrete Semiconductors > Transistors > BJTs > 2SA1943OQ
Qty Available:
Description: Trans GP BJT PNP 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL

05/20/2024 – There are 515 pieces pieces of Part Number 2SA1943-O(Q) Available.

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Trans GP BJT PNP 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL

Specifications

TYPE DESCRIPTION
Contact Plating Copper, Silver, Tin
Mount Through Hole
Number of Pins 3
Collector Base Voltage (VCBO) 230 V
Collector Emitter Breakdown Voltage 230 V
Collector Emitter Saturation Voltage -3 V
Collector Emitter Voltage (VCEO) 230 V
Current Rating -15 A
Element Configuration Single
Emitter Base Voltage (VEBO) 5 V
Frequency 30 MHz
Gain Bandwidth Product 30 MHz
hFE Min 80
Max Collector Current 15 A
Max Frequency 30 MHz
Max Operating Temperature 150 °C
Max Power Dissipation 150 W
Min Operating Temperature -55 °C
Number of Elements 1
Packaging Bulk
Polarity PNP
Power Dissipation 150 W
Schedule B 8541290080
Transition Frequency 30 MHz
Voltage Rating (DC) -230 V
Height 26 mm
Length 20.5 mm
Width 5.2 mm
Contact Plating Copper, Silver, Tin
Mount Through Hole
Number of Pins 3
Collector Base Voltage (VCBO) 230 V
Collector Emitter Breakdown Voltage 230 V
Collector Emitter Saturation Voltage -3 V
Collector Emitter Voltage (VCEO) 230 V
Current Rating -15 A
Element Configuration Single
Emitter Base Voltage (VEBO) 5 V
Frequency 30 MHz
Gain Bandwidth Product 30 MHz
hFE Min 80
Max Collector Current 15 A
Max Frequency 30 MHz
Max Operating Temperature 150 °C
Max Power Dissipation 150 W
Min Operating Temperature -55 °C
Number of Elements 1
Packaging Bulk
Polarity PNP
Power Dissipation 150 W
Schedule B 8541290080
Transition Frequency 30 MHz
Voltage Rating (DC) -230 V
Height 26 mm
Length 20.5 mm
Width 5.2 mm

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