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           Discrete Semiconductors > Transistors > MOSFETs > 2N7002LT1G

2N7002LT1G

Part Number: 2N7002LT1G
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > MOSFETs > 2N7002LT1G
Qty Available:
Description: Mosfet; N-ch; Vdss 60VDC; Rds(on) 7.5 Ohms; Id +/-115MA; SOT-23 (TO-236); Pd 225MW; -55

04/21/2026 – There are 515 pieces pieces of Part Number 2N7002LT1G Available.

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Mosfet; N-ch; Vdss 60VDC; Rds(on) 7.5 Ohms; Id +/-115MA; SOT-23 (TO-236); Pd 225MW; -55

Specifications

TYPE DESCRIPTION
Case/Package SOT-23-3
Contact Plating Tin
Number of Pins 3
Continuous Drain Current (ID) 115 mA
Current Rating 115 mA
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 7.5 Ω
Drain to Source Voltage (Vdss) 60 V
Element Configuration Single
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 50 pF
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 225 mW
Min Operating Temperature -55 °C
Nominal Vgs 2.5 V
Number of Channels 1
Number of Elements 1
Packaging Cut Tape
Power Dissipation 225 mW
Rds On Max 7.5 Ω
Resistance 7.5 Ω
Schedule B 8541210080
Threshold Voltage 1 V
Turn-Off Delay Time 40 ns
Turn-On Delay Time 20 ns
Voltage Rating (DC) 60 V
Height 1.01 mm
Length 3.04 mm
Width 1.4 mm

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