Discrete Semiconductors > Transistors > MOSFETs > 2N6796
2N6796
| Part Number: | 2N6796 |
| Manufacturer: | Infineon |
| Part Type: | Discrete Semiconductors > Transistors > MOSFETs > 2N6796 |
| Qty Available: | |
| Description: | Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line |
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Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-39 |
| Contact Plating | Lead, Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Weight | 2 g |
| Continuous Drain Current (ID) | 5 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 180 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Dual Supply Voltage | 100 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 25 W |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 4 V |
| Number of Elements | 1 |
| On-State Resistance | 200 mΩ |
| Power Dissipation | 25 W |
| Schedule B | 8541290080 |
| Termination | Through Hole |
| Threshold Voltage | 4 V |
| Lead Length | 14.22 mm |
Images
Documentation for Infineon 2N6796
| Datasheet | View & Download 2N6796 Datasheet |
Alternate Descriptions
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