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           Discrete Semiconductors > Transistors > BJTs > 2N5551TA

2N5551TA

Part Number: 2N5551TA
Manufacturer: onsemi
Part Type: Discrete Semiconductors > Transistors > BJTs > 2N5551TA
Qty Available:
Description: Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

04/21/2026 – There are 515 pieces pieces of Part Number 2N5551TA Available.

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Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Specifications

TYPE DESCRIPTION
Case/Package TO-92
Contact Plating Tin
Mount Through Hole
Number of Pins 3
Weight 240 mg
Collector Base Voltage (VCBO) 180 V
Collector Emitter Breakdown Voltage 160 V
Collector Emitter Saturation Voltage 200 mV
Collector Emitter Voltage (VCEO) 160 V
Current Rating 600 mA
Element Configuration Single
Emitter Base Voltage (VEBO) 6 V
Frequency 300 MHz
Gain Bandwidth Product 100 MHz
hFE Min 80
Max Breakdown Voltage 160 V
Max Collector Current 600 mA
Max Frequency 300 MHz
Max Junction Temperature (Tj) 150 °C
Max Operating Temperature 150 °C
Max Power Dissipation 625 mW
Min Operating Temperature -55 °C
Number of Elements 1
Polarity NPN
Power Dissipation 625 mW
Schedule B 8541210080
Transition Frequency 100 MHz
Voltage Rating (DC) 160 V
Height 5.33 mm
Length 5.2 mm
Width 4.19 mm

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