Discrete Semiconductors > Transistors > BJTs > 2N5401TF
2N5401TF
| Part Number: | 2N5401TF |
| Manufacturer: | onsemi |
| Part Type: | Discrete Semiconductors > Transistors > BJTs > 2N5401TF |
| Qty Available: | |
| Description: | High Current PNP Bipolar Transistor, TO-92 |
PCX has onsemi Discrete Semiconductors > Transistors > BJTs > 2N5401TF Electronic Components for Sale.
Pacific Component Xchange specializes in solving challenges such as supply chain procurement, hard to find, long lead time, obsolete, cost savings, kanban and scheduled orders.
High Current PNP Bipolar Transistor, TO-92
Specifications
| TYPE | DESCRIPTION |
| Case/Package | TO-92-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Weight | 178.2 mg |
| Collector Base Voltage (VCBO) | 160 V |
| Collector Emitter Breakdown Voltage | 150 V |
| Collector Emitter Voltage (VCEO) | 150 V |
| Current Rating | -600 mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5 V |
| Frequency | 400 MHz |
| Gain Bandwidth Product | 300 MHz |
| hFE Min | 60 |
| Max Collector Current | 600 mA |
| Max Frequency | 400 MHz |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 625 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Polarity | PNP |
| Power Dissipation | 625 mW |
| Transition Frequency | 400 MHz |
| Voltage Rating (DC) | -160 V |
Documentation for onsemi 2N5401TF
| Datasheet | View & Download 2N5401TF Datasheet |
| Datasheet | View & Download 2N5401TF Datasheet |
| Technical Drawing | View & Download 2N5401TF Technical Drawing |
Alternate Descriptions
FAQ’s
What is the product name and type?
What is the package type and weight of the product?
What is the collector emitter breakdown voltage of the transistor?
What is the maximum collector current and power dissipation of the transistor?
Electronic Component Search
Lookup any part using a part number, manufacturer or keyword.