AP6679GH – P-Channel Power MOSFET – APEC
The AP6679GH is a P-channel enhancement-mode power MOSFET from APEC (Advanced Power Electronics Corp.), rated -30V and -75A with low 9 mΩ (max) on-resistance in a surface-mount TO-252 (DPAK) package.
The AP6679GH from APEC (Advanced Power Electronics Corp.) is a P-channel enhancement-mode power MOSFET designed for efficient low-voltage power switching and load management. It delivers low on-resistance, simple gate-drive requirements, and fast switching in a compact surface-mount TO-252 (DPAK) package, making it well suited for high-current load switching and DC/DC conversion in space-constrained designs.
Key Features
- P-channel enhancement-mode power MOSFET
- Drain-source voltage (VDS): -30 V
- Continuous drain current (ID): -75 A (at TC = 25 °C)
- Low on-resistance RDS(on): 9 mΩ (max, at VGS = -10 V, ID = -30 A)
- Gate-source threshold voltage (VGS(th)): -1 V to -3 V (at VDS = VGS, ID = -250 µA)
- Total power dissipation (PD): 89 W
- Surface-mount TO-252 (DPAK) package
- RoHS-compliant
Applications
- DC/DC converters and point-of-load power supplies
- High-side and low-side load switching
- Battery management and power-path control
- Motor control and current-control modules
- Power switch and inverter circuits
Why Source AP6679GH from Pacific Component Xchange
The AP6679GH can be difficult to source through authorized distribution channels with limited stock and no posted pricing. Pacific Component Xchange specializes in hard-to-find and end-of-availability power-management components, helping engineers and buyers secure parts like the AP6679GH when traditional supply lines fall short. We focus on authenticity, traceability, and reliable global shipping. Submit an RFQ today for current availability, lead time, and pricing on the AP6679GH, and our sourcing team will respond quickly with verified options to keep your production on schedule.
Additional Information
| Manufacturer | Advanced Power Electronics Corp. (APEC) |
|---|---|
| Component Type | P-Channel Enhancement Mode Power MOSFET |
| Channel Type | P-Channel |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID) | -75 A @ TC = 25 °C |
| On-Resistance RDS(on) | 9 mΩ (max) @ VGS = -10 V, ID = -30 A |
| Gate Threshold Voltage VGS(th) | -1 V to -3 V @ VDS = VGS, ID = -250 µA |
| Total Power Dissipation (PD) | 89 W @ TC = 25 °C |
| Package | TO-252 (DPAK) |
| Compliance | RoHS-compliant |
| Part Status | Active |
| Availability | Available |


