
AP3R303GMT-L – N-Channel Power MOSFET – APEC
The AP3R303GMT-L is a 30V N-channel enhancement mode power MOSFET from Advanced Power Electronics Corp. (APEC), featuring ultra-low on-resistance (3.3mO) and high continuous drain current in a compact PMPAK-5x6L (SO-8 compatible) package.
The AP3R303GMT-L is an N-channel enhancement mode power MOSFET manufactured by Advanced Power Electronics Corp. (APEC / A-Power). Designed for high-efficiency power conversion and load-switching applications, it delivers very low on-state resistance while occupying the space-efficient PMPAK-5x6L footprint that is mechanically compatible with the industry-standard SO-8 outline.
Key Features
- N-channel enhancement mode power MOSFET
- Drain-source voltage (VDS): 30 V
- Ultra-low on-resistance RDS(on) as low as 3.3 mO
- Continuous drain current (ID): up to 105 A
- Gate-source voltage (VGS): +/-20 V
- PMPAK-5x6L package, compatible with the SO-8 footprint (with backside heatsink tab)
- Top marking: 3R303GMT
- RoHS compliant construction
Applications
- Synchronous and non-synchronous DC-DC buck/boost conversion
- Point-of-load (POL) power supplies
- Load switching and power management circuits
- Motor drive and BLDC control
- Battery management and protection systems
Why Source AP3R303GMT-L from Pacific Component Xchange
The AP3R303GMT-L is a hard-to-find power MOSFET with little or no authorized-distributor stock. Pacific Component Xchange specializes in sourcing scarce, end-of-life, and allocation-constrained power-management semiconductors for engineers and procurement teams worldwide.
Submit a Request For Quote (RFQ) and our sourcing specialists will locate verified, authentic AP3R303GMT-L inventory, confirm date codes and packaging, and provide competitive lead times. We support obsolete and hard-to-find part procurement, rigorous authenticity and counterfeit-avoidance screening, and global shipping. Request your AP3R303GMT-L quote today.
Additional Information
| Manufacturer | Advanced Power Electronics Corp. (APEC / A-Power) |
|---|---|
| Component Type | N-Channel Enhancement Mode Power MOSFET |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Gate-Source Voltage (VGS) | +/-20 V |
| On-Resistance RDS(on) | As low as 3.3 mO |
| Continuous Drain Current (ID) | Up to 105 A |
| Package | PMPAK-5x6L (SO-8 compatible footprint) |
| Top Marking | 3R303GMT |
| Compliance | RoHS |
| Part Status | Active |
| Availability | Available |

