MT29F64G08CDCBBH1-12:B – MLC NAND Flash – Micron

The Micron MT29F64G08CDCBBH1-12:B is a 64Gb (8Gb x8) MLC NAND Flash memory device in a 100-ball VBGA package, supporting an ONFI 2.3 asynchronous/synchronous interface rated to a 166 MT/s (-12) speed grade. This obsolete, hard-to-find part is available for RFQ from Pacific Component Xchange.

The MT29F64G08CDCBBH1-12:B from Micron Technology is a high-density 64Gb MLC (multi-level cell) NAND Flash memory device organized as 8Gb x8 (8-bit data bus). It is part of Micron’s MT29F64G08C / L84A family of asynchronous/synchronous NAND devices and is housed in a space-efficient 100-ball VBGA package measuring 12mm x 18mm x 1.0mm. The “-12” suffix denotes a 166 MT/s synchronous speed grade and the “:B” indicates the second design revision.

This device implements an Open NAND Flash Interface (ONFI) 2.3-compliant, JEDEC JESD230-interoperable interface, supporting both a legacy asynchronous mode and a high-speed source-synchronous (DDR) mode. The L84A family supports synchronous throughput up to 200 MT/s per pin (timing mode 5, 10ns DDR clock) at the device level. With on-chip data strobe (DQS) signaling and an advanced command set (program cache, read cache, multi-plane and multi-LUN operations, copyback, OTP mode, read unique ID, and read retry), it is well suited to embedded mass-storage and solid-state designs.

Key Features

• Multi-level cell (MLC) NAND Flash technology
• Density: 64Gb; organization x8 (8-bit data bus)
• Page size (x8): 8936 bytes (8192 + 744 spare bytes)
• Block size: 256 pages (2048KB + 186KB); 2 planes x 2048 blocks per plane (4096 blocks total at 64Gb)
• ONFI 2.3-compliant; JEDEC NAND Flash Interface Interoperability (JESD230) compliant
• Synchronous (DDR) I/O up to 200 MT/s per pin (timing mode 5); asynchronous I/O up to 50 MT/s (tRC/tWC 20ns min)
• Speed grade -12 = 166 MT/s synchronous (-10 = 200 MT/s)
• Operating voltage: VCC 2.7-3.6V, VCCQ 1.7-1.95V (1.8V I/O), per the C voltage code
• Array performance: read page 100us (max), program page 1300us (typ), erase block 3ms (typ)
• Endurance: 3000 PROGRAM/ERASE cycles; read retry required for specified endurance and data integrity
• Package: 100-ball VBGA, 12mm x 18mm x 1.0mm (package code H1)
• Advanced command set: program/read cache, multi-plane, multi-LUN, copyback, OTP, read unique ID, read retry

Applications

• Solid-state drives (SSDs) and embedded storage modules
• Networking and telecom equipment code/data storage
• Industrial and embedded computing systems
• Set-top boxes, media players, and consumer electronics
• Data-logging and mass-storage subsystems

Why Source MT29F64G08CDCBBH1-12:B from Pacific Component Xchange

The MT29F64G08CDCBBH1-12:B is an obsolete, hard-to-find Micron MLC NAND device with little to no authorized-distributor availability. Pacific Component Xchange specializes in sourcing legacy, end-of-life, and allocation-constrained memory for engineers and procurement teams who need to keep mature designs in production. We maintain inventory of scarce NAND, DRAM, and flash devices, support authenticity and inspection requirements, and ship globally to keep your builds on schedule.

Inventory is available on a Request-for-Quote basis. Submit an RFQ today for current pricing, lead time, and date-code/quantity availability on MT29F64G08CDCBBH1-12:B, and our team will respond quickly with a competitive offer.