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K4UBE3D4AA-MGCL – LPDDR4X SDRAM – Samsung

The Samsung K4UBE3D4AA-MGCL is a 32Gb (DDP) LPDDR4X mobile SDRAM rated up to 4266 Mbps, organized as 64Mb x32DQ x8 banks x2 channels in a 200-ball FBGA (10 x 15 mm). This discontinued part is available now on an RFQ basis.

Brand:Samsung
SKU: K4UBE3D4AA-MGCL Categories: ,
Please contact us or add to quote for current pricing and availability.

The Samsung K4UBE3D4AA-MGCL is a high-density 32Gb LPDDR4X SDRAM built as a dual-die package (DDP) and intended for high-performance mobile and embedded designs. It is organized as 64Mb x32DQ x8 banks x2 channels per the Samsung datasheet (32Gb total in a dual-die package) and delivered in a compact 200-ball FBGA measuring 10 x 15 mm. The device targets the highest LPDDR4X speed grade, supporting data rates up to 4266 Mbps, with selectable speed bins of 3200 / 3733 / 4266 Mbps.

LPDDR4X improves on LPDDR4 by lowering the I/O supply (VDDQ) to roughly 0.6V, reducing interface power while maintaining bandwidth. The K4UBE3D4AA-MGCL employs a double-data-rate architecture with two channels per die, eight internal banks per channel, differential clock and data strobes, Data Bus Inversion (DBI), and a full LPDDR4X training feature set.

Key Features

  • Memory type: LPDDR4X SDRAM (mobile DRAM)
  • Density: 32Gb total, dual-die package (DDP)
  • Organization: 64Mb x32DQ x8 banks x2 channels
  • Speed bins: 3200 / 3733 / 4266 Mbps (4266 Mbps grade)
  • Supply voltages: VDD1 1.70-1.95V, VDD2 1.06-1.17V, VDDQ 0.57-0.65V (LPDDR4X)
  • Architecture: Double-data-rate, 2 channels per die, 8 internal banks per channel
  • Burst length: 16, 32 (OTF); sequential burst type
  • Interface: LVSTLE_06 I/O, differential clock and data strobes, DBI/Masked Write, configurable drive strength
  • Features: Write leveling, CA calibration, DQ calibration, ZQ calibration, Partial Array Self Refresh (PASR), Temperature Compensated Self Refresh (TCSR)
  • Package: 200-ball FBGA, 10 x 15 mm
  • Operating temperature: -25 C to 85 C (general)

Applications

  • Smartphones and tablets
  • Automotive infotainment and telematics modules
  • Industrial and embedded computing platforms
  • Networking and edge devices requiring high-bandwidth mobile DRAM
  • Single-board computers and SoC reference designs

Why Source K4UBE3D4AA-MGCL from Pacific Component Xchange

The K4UBE3D4AA-MGCL has been discontinued by Samsung and has little to no authorized-distributor availability, making it a challenge for production and maintenance teams that still depend on it. Pacific Component Xchange is an independent distributor specializing in hard-to-find, end-of-life, and obsolete memory. We currently have stock available for this part on a Request-for-Quote basis.

Every order is backed by our commitment to authenticity and quality, with inspection and testing processes designed to mitigate counterfeit risk. We ship globally and support both prototype and volume requirements. Submit an RFQ today for current quantity, lead time, and pricing on the K4UBE3D4AA-MGCL.

Additional Information

Manufacturer

Samsung

Component Type

LPDDR4X SDRAM

Density

32Gb (DDP, dual-die package)

Organization

64Mb x32DQ x8 banks x2 channels

Package

FBGA-200 (10 x 15 mm)

Speed/Grade

Up to 4266 Mbps (bins: 3200/3733/4266 Mbps)

Supply Voltage

VDD1 1.70-1.95V / VDD2 1.06-1.17V / VDDQ 0.57-0.65V

Burst Length

16, 32 (OTF), Sequential

Temp Range

-25 C to 85 C (general)

Part Status

Obsolete / Discontinued

Availability

Available