K4B4G1646E-BYMA0CV – DDR3L SDRAM – Samsung
The Samsung K4B4G1646E-BYMA0CV is a 4Gb DDR3L SDRAM (E-die) organized as 256M x 16 in a 96-ball FBGA package, rated DDR3L-1866 (933 MHz) at 1.35V/1.5V. Available now for RFQ at Pacific Component Xchange.
The Samsung K4B4G1646E-BYMA0CV is a 4 Gb DDR3L SDRAM device from Samsung’s E-die family, organized as 256M x 16 (x16 I/Os across 8 internal banks). It is supplied in a 96-ball FBGA package and supports the low-voltage DDR3L power rail of 1.35V as well as standard 1.5V operation, making it a drop-in option for power-sensitive embedded and computing designs that require x16 wide-I/O DRAM.
This component is widely used in embedded systems, networking equipment, and industrial computing platforms where a single-chip 4Gb x16 DDR3L solution simplifies board layout and reduces routing complexity compared with x8 alternatives.
Key Features
- Manufacturer: Samsung
- Device: 4Gb DDR3L SDRAM, E-die
- Organization: 256M x 16 (x16 I/Os, 8 banks)
- Speed grade: DDR3L-1866 (933 MHz fCK, 1866 Mbps/pin)
- Package: 96-ball FBGA (7.5 x 13.3 mm)
- Supply voltage: VDD/VDDQ 1.35V (1.28V–1.45V) low-voltage DDR3L; 1.5V compatible, JEDEC compliant
- Eight internal banks for concurrent operation; programmable CAS latency, burst length, and on-die termination (ODT)
- Operating case temperature range: 0°C to 95°C
- RoHS-compliant, lead-free construction
Applications
- Embedded computing and single-board computers
- Networking, routing, and switching equipment
- Industrial automation and control systems
- Digital signage and set-top boxes
- Solid-state storage controllers and caching
- Consumer and IoT gateway devices
Why Source K4B4G1646E-BYMA0CV from Pacific Component Xchange
The K4B4G1646E-BYMA0CV is a discontinued / end-of-life DDR3L memory device with little to no availability through authorized distribution. Pacific Component Xchange specializes in sourcing obsolete, allocated, and difficult-to-find memory components for engineers and supply-chain teams who need to keep mature designs in production.
We maintain stock of legacy DRAM and offer rigorous quality and authenticity verification on every order, along with global shipping and responsive support. With current availability on this part, we can help you secure supply quickly and avoid costly redesigns.
Request a quote today and our sourcing specialists will respond promptly with pricing, lead time, and quantity options for the K4B4G1646E-BYMA0CV.
Additional Information
| Manufacturer | Samsung |
|---|---|
| Component Type | DDR3L SDRAM (E-die) |
| Density | 4 Gb |
| Organization | 256M x 16 (x16 I/Os, 8 banks) |
| Package | 96-ball FBGA (7.5 x 13.3 mm) |
| Speed Grade | DDR3L-1866 (933 MHz fCK, 1866 Mbps/pin) |
| Supply Voltage | 1.35V (1.28V–1.45V); 1.5V compatible (VDD/VDDQ, JEDEC) |
| Operating Temperature | 0°C to 95°C (case temperature) |
| Part Status | Obsolete / Discontinued (Hard-to-Find) |
| Availability | Available |




