ATF-38143-TR1G

RF MOSFET PHEMT FET 2V SOT343

ATF-38143-TR1G – RF MOSFET PHEMT FET, 2GHz, 16dB Gain – Broadcom Limited
The ATF-38143-TR1G from Broadcom Limited is a high-performance RF MOSFET pseudomorphic High Electron Mobility Transistor (pHEMT) designed for precision radio frequency applications. This surface-mount FET delivers exceptional gain and ultra-low noise characteristics in a compact SOT-343 package, making it ideal for signal amplification stages where minimal distortion is critical. PCX supplies this component with guaranteed quality and rapid shipping.

Key Features

Frequency: 2GHz operation
Gain: 16dB typical
Noise Figure: Ultra-low 0.4dB
Output Power: 12dBm
Voltage Rating: 4.5V (tested at 2V)
Current Handling: 145mA (tested at 10mA)
Package: SC-82A, SOT-343 (SC70 4-Lead)

Technical Details
This RF FET utilizes advanced pHEMT technology to achieve superior high-frequency performance with minimal signal degradation. The transistor features a compact SOT-343 surface-mount package (Supplier Device Package: SC70 4-Lead) optimized for automated PCB assembly. While this part is marked obsolete by the manufacturer, PCX maintains verified stock for legacy system support.

Typical Applications

Low-noise amplifier (LNA) stages
RF receiver front-ends
Wireless communication systems
Test & measurement equipment
Satellite communication modules

About Broadcom Limited
Broadcom Limited (now part of Broadcom Inc.) is a global technology leader renowned for its cutting-edge semiconductor solutions. With decades of expertise in RF and wireless technologies, Broadcom has set industry standards for high-frequency component performance and reliability across telecommunications, industrial, and aerospace sectors.
The company’s RF components are trusted for mission-critical applications due to rigorous quality control and consistent electrical characteristics. Broadcom’s pHEMT technology, exemplified in the ATF-38143 series, demonstrates their commitment to pushing the boundaries of high-frequency semiconductor design.

About RF MOSFETs
RF MOSFET transistors are specialized semiconductor devices engineered to amplify high-frequency signals while maintaining signal integrity. Unlike standard MOSFETs, RF variants feature optimized geometries and materials to minimize parasitic capacitance and inductance, enabling stable operation at microwave frequencies.
These components form the foundation of modern wireless systems, providing critical amplification in receiver chains, oscillator circuits, and signal processing stages. The pHEMT technology in this Broadcom device offers superior electron mobility compared to conventional FETs, resulting in higher gain, lower noise, and improved power efficiency at GHz frequencies.

Packaging Options
Available in industry-standard formats: Tape & Reel (TR),