STY139N65M5
$20.67
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STY139N65M5 – 650V N-Channel Power MOSFET – STMicroelectronics
Optimize your high-power designs with the STY139N65M5 N-Channel MOSFET from STMicroelectronics. This MDmesh™ V series component delivers exceptional efficiency with ultra-low on-resistance and robust thermal performance, making it ideal for demanding power conversion applications. PCX ensures genuine STMicroelectronics components with same-day shipping and dedicated technical support.
Key Features
Voltage Rating: 650V Drain-Source (Vdss)
High Current Capacity: 130A Continuous Drain Current (Id) @ 25°C
Ultra-Low Resistance: 17mΩ Max Rds(on) @ 65A, 10V
Fast Switching: Low Gate Charge (Qg): 363nC @ 10V
Thermal Resilience: 625W Power
Additional Information
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs |
|---|---|
| Brand | STMicroelectronics |
| Mfr | STMicroelectronics |
| Series | MDmesh™ V |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 65A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 363 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 15600 pF @ 100 V |
| Power Dissipation (Max) | 625W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | MAX247™ |
| Package / Case | TO-247-3 |
| Base Product Number | STY139 |
| Full Description | STY139N65M5 |
