
MMBT4403LT1G – Transistor – onsemi
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Bipolar Transistors – BJT 600mA 40V PNP
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MMBT4403LT1G – PNP Bipolar Transistor, 600mA 40V – onsemi
Optimize your circuit designs with the onsemi MMBT4403LT1G PNP bipolar junction transistor (BJT). This surface-mount component delivers reliable switching and amplification for low-power applications, featuring high current gain and a compact SOT-23-3 footprint. PCX ensures rapid shipment and technical support for all your semiconductor needs.
Key Features
- Transistor Type: PNP Bipolar (BJT)
- Max Collector Current: 600mA
- Collector-Emitter Voltage: 40V
- Power Rating: 300mW
- DC Current Gain (hFE): Min 100 @ 150mA, 2V
- Transition Frequency: 200MHz
- Package: SOT-23-3 (TO-236) surface-mount
Technical Specifications
This PNP transistor offers a low Vce saturation voltage of 750mV (max) at 500mA collector current, ensuring efficient switching performance. Operating across an industrial temperature range of -55°C to +150°C (TJ), it provides stable functionality in demanding environments. The component is RoHS-compliant and supplied in moisture-sensitive level 1 (MSL1) packaging.
Typical Applications
- Signal amplification in audio circuits
- Load switching in power management systems
- Interface driving for sensors and relays
- Signal inversion in digital logic circuits
- Current mirror configurations
About onsemi
onsemi (ON Semiconductor) is a Fortune 500 leader in power management and sensor technologies. With over 25 years of industry innovation, they deliver high-reliability semiconductor solutions for automotive, industrial, and consumer markets. Their rigorous quality control and vertically integrated manufacturing ensure consistent performance across global supply chains.
onsemi holds ISO/TS 16949 certification for automotive-grade components and invests heavily in sustainable technology. Their transistors undergo extensive stress testing for thermal stability and ESD protection, making them a trusted choice for critical electronic systems worldwide.
About Bipolar Junction Transistors
Bipolar Junction Transistors (BJTs) are fundamental semiconductor devices used for amplification and switching in electronic circuits. Unlike MOSFETs, BJTs are current-controlled components that offer linear response characteristics, making them ideal for analog signal processing. Their three-layer structure (PNP or NPN) enables precise control of electron flow between emitter and collector terminals via base current.
BJTs remain essential in applications requiring low-cost amplification, fast switching under 500MHz, or high current density. Modern surface-mount packages like SOT-23 allow compact PCB designs while maintaining thermal performance. When selecting BJTs, key parameters include current gain (hFE), transition frequency, and Vce saturation voltage – all optimized in the MMBT4403LT1G.
Packaging Options
Available in Tape & Reel (TR), Cut Tape (CT), and Digi-Reel® formats for automated assembly compatibility. All packaging meets EIA-481 standards.
FAQs
Q: What is the difference between PNP and NPN transistors?
A: PNP transistors conduct when the base is pulled low relative to the emitter, while NPN types activate with a high base signal. The MMBT4403LT1G is a PNP variant.
Q: Can this transistor handle automotive applications?
A: While industrial-rated (-55°C to +150°C TJ), verify against specific AEC-Q101 requirements for automotive use.
Q: Is anti-static handling required?
A: Yes. This ESD-sensitive component requires IEC 61340-5-1 compliant handling procedures.
Q: What’s the typical base current for saturation at 500mA load?
A: Datasheet indicates 50mA base current achieves 750mV max Vce saturation at 500mA collector current.
Q: Can I parallel multiple transistors for higher current?
A: Possible with current-balancing resistors, but consider thermal derating. A single device supports 600mA continuous current.
Q: Does PCX provide datasheets?
A: Yes. Access the full MMBT4403LT1G datasheet on PCXCo.com for detailed specifications and application notes.
Disclaimer: Product images are representational. Refer to datasheet for exact dimensions and specifications.
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Additional Information
| Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors |
|---|---|
| Brand | onsemi |
| Mfr | onsemi |
| Packaging | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Power - Max | 300 mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | MMBT4403 |
| Full Description | MMBT4403LT1G |


