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2SC536NG-NPA-AT – Transistor – onsemi

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2SC536NG-NPA-AT – NPN Transistor, 150mA, 50V, 200MHz – onsemi

Source high-performance switching and amplification for legacy electronics with the onsemi 2SC536NG-NPA-AT NPN bipolar transistor. This through-hole component delivers reliable signal processing in compact designs, backed by onsemi’s industry-leading quality and PCX’s guaranteed fast shipping and dedicated support.

Key Features

  • Type: NPN Bipolar Junction Transistor (BJT)
  • Max Collector Current (Ic): 150 mA
  • Collector-Emitter Voltage (Vce): 50 V
  • Transition Frequency: 200 MHz
  • Power Handling: 500 mW
  • DC Current Gain (hFE): Min 280 @ 1mA, 6V
  • Low Saturation Voltage: 300mV @ 10mA, 100mA
  • High-Temperature Operation: Up to 150°C (TJ)

Technical Details

Designed for through-hole mounting in TO-92 (TO-226) packages, this transistor features a low collector cutoff current (100nA ICBO) for efficient performance. Its NPN configuration supports general-purpose amplification and switching tasks. The device operates reliably across industrial temperature ranges.

Typical Applications

  • Signal amplification in audio circuits
  • Switching loads in power management systems
  • Driver stages in sensor interfaces
  • Legacy industrial control boards
  • Consumer electronics repair and maintenance

About onsemi

onsemi (ON Semiconductor) is a global leader in energy-efficient innovations, delivering semiconductor solutions for automotive, industrial, and consumer markets. With decades of expertise, onsemi sets industry benchmarks for quality, reliability, and technological advancement in discrete components and integrated circuits.

The company’s rigorous manufacturing standards and extensive product validation ensure consistent performance in critical applications. onsemi’s commitment to sustainable innovation makes it a trusted partner for engineers designing next-generation electronic systems.

About Bipolar Junction Transistors (BJTs)

Bipolar Junction Transistors (BJTs) are fundamental semiconductor devices used for current amplification and electronic switching. NPN transistors like the 2SC536 series control electron flow between layers, enabling precise signal management in analog and digital circuits. Their simplicity, high-speed operation, and linear response make them indispensable in amplification stages.

BJTs remain vital in legacy systems, power regulation, and audio applications due to their robustness and ease of integration. Understanding parameters like hFE (gain), Vce saturation, and transition frequency is crucial for optimizing circuit efficiency and reliability in designs ranging from power supplies to RF modules.

Packaging

Available in Tape & Reel (TR) packaging for automated assembly compatibility.

FAQs

Question: Is this transistor suitable for high-frequency applications?
Answer: Yes, its 200MHz transition frequency supports RF and switching circuits up to VHF ranges.

Question: Can I use this as a replacement for obsolete designs?
Answer: Absolutely. Its TO-92 package and electrical specs make it ideal for legacy system repairs.

Question: What is the significance of the hFE rating?
Answer: hFE indicates current gain (min 280 here). Higher values provide greater amplification efficiency.

Question: Does PCX provide datasheets for this component?
Answer: Yes, download the full datasheet directly from our product page for detailed specifications.

Question: How does Vce saturation affect performance?
Answer: Low Vce saturation (300mV) minimizes power loss during switching, improving energy efficiency.

Question: Is this part RoHS compliant?
Answer: Refer to the datasheet for compliance details. PCX ensures accurate documentation for all components.

Product images are representational. Refer to datasheets for exact dimensions.

Order Today for Fast Delivery!

Secure your onsemi 2SC536NG-NPA-AT transistors now from PCX – your trusted source for authentic components, rapid shipping, and expert technical support. Avoid project delays: order today!

Additional Information

Category

Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors

Brand

onsemi

Mfr

onsemi

Packaging

Tape & Reel (TR)

Part Status

Obsolete

Transistor Type

NPN

Current - Collector (Ic) (Max)

150 mA

Voltage - Collector Emitter Breakdown (Max)

50 V

Vce Saturation (Max) @ Ib, Ic

300mV @ 10mA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

280 @ 1mA, 6V

Power - Max

500 mW

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body, Formed Leads

Supplier Device Package

TO-92 (TO-226)

Base Product Number

2SC536

Full Description

2SC536NG-NPA-AT