What is the Samsung K4A8G085WB-BCTD?

It is an 8Gb DDR4 SDRAM component (Samsung B-die) organized as 1Gx8, rated at DDR4-2666 (CL19) and housed in a 78-ball FBGA package. It is used as a memory chip in DDR4 modules and embedded designs.

What is the speed and data rate of the K4A8G085WB-BCTD?

The -BCTD suffix denotes a DDR4-2666 speed bin, delivering 2666 Mbps per pin at a maximum clock frequency of 1333 MHz, with a CAS latency of CL19 (19-19-19).

What is the organization and density?

The device is 8Gb in density, organized as 1Gx8 (x8 data width), with 16 internal banks arranged in 4 bank groups.

What package does the K4A8G085WB-BCTD use?

It ships in a 78-ball FBGA package and is RoHS-compliant.

Is the K4A8G085WB-BCTD still available?

Samsung maintains an active product page for the device, but authorized-distributor stock can be limited. Pacific Component Xchange carries this part and accepts RFQs for pricing and lead time.

How do I get pricing for the K4A8G085WB-BCTD?

This is a Request-For-Quote item. Submit an RFQ to Pacific Component Xchange and our team will respond with current pricing, available quantity, and lead time.

K4A8G085WB-BCTD – DDR4 SDRAM – Samsung

Samsung K4A8G085WB-BCTD is an 8Gb DDR4 SDRAM (B-die) organized as 1Gx8, rated at DDR4-2666 (CL19) in a 78-ball FBGA package. Available for RFQ at Pacific Component Xchange.

Brand:Samsung

SKU: K4A8G085WB-BCTD Categories: Electronic Parts, RFQ

Please contact us or add to quote for current pricing and availability.

The Samsung K4A8G085WB-BCTD is an 8-gigabit (8Gb) DDR4 SDRAM memory component built on Samsung’s B-die process. Organized as 1Gx8 (x8), this device delivers a DDR4-2666 data rate (2666 Mbps per pin) at a 1.2V operating voltage, making it a high-performance, power-efficient building block for memory modules and embedded designs. It is supplied in a compact 78-ball FBGA package.

Key Features

Density: 8Gb (8 gigabit) DDR4 SDRAM, Samsung B-die
Organization: 1Gx8 (x8 data width)
Data rate: DDR4-2666 (2666 Mbps/pin), max clock 1333 MHz
CAS latency: CL19 (19-19-19)
Architecture: 16 internal banks arranged in 4 bank groups
Supply voltage: VDD/VDDQ 1.2V; Pseudo Open Drain (POD) interface
Operating temperature: 0°C to 95°C (case), with 2x refresh in the extended range
Package: 78-ball FBGA, RoHS-compliant

Applications

DDR4 UDIMM, SODIMM, and RDIMM memory modules
Desktop, notebook, and workstation main memory
Server and data-center memory subsystems
Networking, telecom, and high-performance embedded systems
Industrial computing and edge platforms requiring 8Gb DDR4

Why Source K4A8G085WB-BCTD from Pacific Component Xchange

The K4A8G085WB-BCTD can be difficult to obtain through authorized distribution as DDR4 supply tightens and production shifts to newer densities. Pacific Component Xchange specializes in hard-to-find and obsolete memory, giving you a reliable channel for this Samsung DDR4 device when traditional sources are constrained.

Every order is backed by our authenticity and quality-assurance process, with inspection and testing options to protect your build. We support global shipping and flexible quantities for both production runs and last-time-buy requirements.

Ready to buy? This is a Request-For-Quote item. Submit an RFQ to Pacific Component Xchange today for current pricing, lead time, and volume availability on the Samsung K4A8G085WB-BCTD.

Additional Information

Manufacturer	Samsung
Component Type	DDR4 SDRAM (B-die)
Density	8Gb
Organization	1Gx8 (x8)
Package	78-ball FBGA
Speed/Grade	DDR4-2666, CL19 (19-19-19), 2666 Mbps/pin
Banks	16 banks / 4 bank groups
Supply Voltage	1.2V (VDD/VDDQ)
Temp Range	0°C to 95°C (case)
Part Status	Active
Availability	Available