AP9938GEY – Dual N-Channel Power MOSFET – APEC

The AP9938GEY is a dual N-channel enhancement-mode power MOSFET from Advanced Power Electronics Corp. (APEC), rated at 20V BVDSS with low 16 mOhm on-resistance in a compact 2928-8 leadless surface-mount package.

The AP9938GEY (full ordering code AP9938GEY-HF) is a dual N-channel enhancement-mode power MOSFET manufactured by Advanced Power Electronics Corp. (APEC). It integrates two low on-resistance N-channel MOSFETs in a single compact 2928-8 leadless surface-mount package, making it well suited for space-constrained power-management and battery applications. The device is capable of 1.8V gate drive, enabling operation from low-voltage logic and controller rails.

Key Features

• Dual N-channel enhancement-mode power MOSFET
• Drain-Source breakdown voltage (BV_DSS): 20V
• Low on-resistance R_DS(ON): 16 mOhm
• Continuous drain current (I_D): 7.5A
• Capable of 1.8V gate drive for low-voltage control
• Lower on-resistance with surface-mount construction
• 2928-8 (2.9 x 2.8 mm) leadless surface-mount package
• RoHS-compliant and halogen-free (-HF suffix)

Applications

• DC/DC converters
• Battery-powered portable devices
• Load switching and power management
• Notebook and consumer electronics power circuits

Why Source AP9938GEY from Pacific Component Xchange

The AP9938GEY is a hard-to-find part with little to no authorized-distributor stock. Pacific Component Xchange specializes in sourcing obsolete, allocated, and difficult-to-locate power-management ICs and discrete semiconductors. Request a quote (RFQ) for the AP9938GEY and our team will leverage a global supply network to locate authentic inventory, verify quality, and ship worldwide. Contact Pacific Component Xchange today to secure pricing and availability for this dual N-channel MOSFET.