
AP9561GM – P-Channel Power MOSFET – APEC
The AP9561GM is a -40V P-channel enhancement mode power MOSFET from APEC (Advanced Power Electronics Corp.) in an SO-8 package, featuring low 18mO on-resistance and fast switching for compact power applications.
The AP9561GM is a P-channel enhancement mode power MOSFET manufactured by APEC (Advanced Power Electronics Corp.). This device combines low on-resistance, low gate charge, and fast switching in a space-saving SO-8 surface-mount package, making it well suited for load switching, power management, and high-side switching in portable and board-level designs.
Key Features
- P-Channel Enhancement Mode Power MOSFET
- Drain-Source Voltage (BVDSS): -40 V
- On-Resistance RDS(on): 18 mO (0.018 O)
- Continuous Drain Current (ID): -9.4 A
- Gate-Source Voltage (VGS): +/-20 V
- Total Gate Charge (Qg): 26 nC
- Maximum Power Dissipation: 25 W
- Operating Junction Temperature: up to 150 C
- Simple gate drive requirement and fast switching characteristic
- SO-8 surface-mount package (halogen-free -HF variant also available)
Applications
- Load switching and power-path management
- DC-DC converter high-side switching
- Battery protection and charging circuits
- Notebook, tablet, and portable device power management
- Motor drive and general-purpose board-level power switching
Why Source AP9561GM from Pacific Component Xchange
The AP9561GM is a specialty power MOSFET with limited authorized-distributor availability, making it a hard-to-find part for repair, EOL, and legacy production needs. Pacific Component Xchange is an independent distributor that specializes in sourcing scarce and obsolete power-management semiconductors. Every unit is inspected for authenticity and quality, and we ship worldwide to keep your builds on schedule. If you need the AP9561GM in volume or as a one-time buy, submit a Request for Quote (RFQ) and our sourcing team will respond with current pricing, lead time, and availability.
Additional Information
| Manufacturer | APEC (Advanced Power Electronics Corp.) |
|---|---|
| Component Type | P-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage (BVDSS) | -40 V |
| On-Resistance RDS(on) | 18 mO (0.018 O) |
| Continuous Drain Current (ID) | -9.4 A |
| Gate-Source Voltage (VGS) | +/-20 V |
| Total Gate Charge (Qg) | 26 nC |
| Power Dissipation | 25 W |
| Operating Junction Temperature | 150 C max |
| Package | SO-8 |
| Part Status | Active |
| Availability | Available |

